FT-UH Hosts IEEE Semiconductor Lecture Series, Discusses Future CMOS Scaling Solutions
Gowa, May 13, 2026 – The Department of Electrical Engineering, Faculty of Engineering, Hasanuddin University (FT-UH), successfully hosted the IEEE Distinguished Lecture – Semiconductor Lecture Series, which took place in a hybrid format at Lecture Theater I (LT I) in the CSA Building at FT-UH and via the Zoom Meeting platform. The event was attended by faculty members, students, and members of the general public with an interest in semiconductor technology and modern electronic devices.
The event featured an international speaker, Prof. Mansun J. Chan from the Hong Kong University of Science and Technology (HKUST), who presented on the topic “The Journey of MOSFET: From Planar to Stacked 3D Transistors.”
The event was also attended by Prof. Dr.-Ing. Ir. Faizal Arya Samman, ST, MT, IPU, AseanEng, ACPE, who serves as the Head of the Department of Electrical Engineering at Hasanuddin University and also served as the Lecture Chair for the event. On this occasion, the welcoming speech on behalf of the Rector of Hasanuddin University, Prof. Dr. Ir. Jamaluddin Jompa, M.Sc., was delivered by Prof. Dr.-Ing. Faizal A. Samman.
In his remarks, Prof. Faizal emphasized the importance of strengthening international cooperation to support research and innovation in the field of semiconductor technology, particularly in light of the rapidly advancing electronics and artificial intelligence industries. He also noted that international academic events such as the IEEE Distinguished Lecture serve as a strategic platform for broadening students’ and researchers’ perspectives on the latest global technological developments.
During the main session, Prof. Mansun J. Chan discussed the evolution of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology, ranging from conventional planar structures to the development of stacked 3D transistors, which form the foundation of next-generation semiconductor technology.
He explained various challenges arising from the miniaturization of transistor dimensions—such as short-channel effects and increased power consumption—which subsequently led to the emergence of FinFET technology as a three-dimensional architectural solution to enhance electrostatic control and device scalability. In addition, Prof. Chan also presented the latest developments regarding stacked 3D transistors and Complementary FET (CFET) technology as potential solutions for continuing CMOS scaling below the 2nm technology node. The material presented covered design principles, fabrication techniques, and the advantages of these technologies in improving the performance, transistor density, and energy efficiency of modern electronic devices.
As one of the leading experts in the field of semiconductor devices, Prof. Chan also shared his research experience in developing the BSIM model for SPICE—which has become an industry standard—as well as his contributions to the world’s first demonstration of Stacked CFET technology.
The event took place in an interactive format through discussion and Q&A sessions, during which participants showed great enthusiasm for delving into issues related to future transistor technology, semiconductor fabrication, and the challenges of developing next-generation electronic devices.
Through this event, the Department of Electrical Engineering at FT-UH once again demonstrated its commitment to hosting high-quality international academic forums and supporting the strengthening of human resources in the fields of semiconductors, microelectronics, and smart technologies.
It is hoped that this event will provide insights and inspiration for participants in advancing research and innovation, while also strengthening academic and industrial collaboration networks at both the national and international levels.